Home Technologies Memory & Storage Samsung announces 1TB storage for smartphones – Galaxy S10+ to feature it with 12GB RAM

Samsung announces 1TB storage for smartphones – Galaxy S10+ to feature it with 12GB RAM

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Galaxy S10 Render

Samsung has officially announced the industry’s first 1-Terabyte Embedded Universal Flash Storage (eUFS) for smartphones. The company introduces the terabyte segment of storage after just over a year of introducing the 512GB storage.

It’s worth noting here that the Korean tech-giant has started the mass production of the new eUFS chips. So we can assume that the company might really ship the Galaxy S10, being the first one, with 1TB internal storage.

Following the rumors and speculations which have already reported about the Galaxy S10+ will feature 1TB storage alongside a massive 12GB RAM, it’s now advisable that the company has really plans about the same. Announcing a new high-capacity flash storage just before weeks of launching its premium smartphone, wouldn’t mean anything else.

With doubled the capacity, the new 1TB eUFS solution comes in the same size as the previous 512GB chip, which is 11.5mm x 13.0mm. The new chip combines 16 stacked-layers of V-NAND flash memory with a new proprietary controller.

Samsung 1TB eUFS - Embedded Universal Flash Storage

The new chip will allow smartphones to store 260 videos with 4K/UHD resolution of 10-minutes each. It’s twenty times more than most 64GB storage would do.

Speed wise, Samsung mentions that it’s 10 times faster than a microSD card. The new 1TB chip will allow users a tremendous sequential read-speed of 1000 MB/s (megabytes per second) and 260 MB/s when writing. Also note that it’s twice as fast in seq. read as a common 2.5-inch SATA SSD which will end up at around 540 MB/s.

Samsung also notes that the new 1TB chip is 38% faster in random read-speed than its existing 512GB storage solutions. Likewise, the random writes are 500 times faster than high-speed microSD card.

Sequential
Random
Memory Read Speed Write Speed Read Speed Write Speed
1TB eUFS 2.1 1000 MB/s 260 MB/s 58,000 IOPS 50,000 IOPS
512GB eUFS 2.1 860 MB/s 255 MB/s 42,000 IOPS 40.000 IOPS
256GB UFS Card 530 MB/s 170 MB/s 40,0000 IOPS 35.000 IOPS
256 eUFS 2.0 850 MB/s 260 MB/s 45,000 IOPS 40,000 IOPS
128GB eUFS 2.0 300 MB/s 150 MB/s 19,000 IOPS 14,000 IOPS

 

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