Samsung starts producing world’s first 512GB Universal Flash Storage for Smartphone

Samsung 512GB eUFS

With the demand of ever-increasing amounts of multimedia content on mobile storage, Samsung sets a new threshold of 512GB Universal Flash Storage for mobile devices.

Samsung has announced that it has begun mass production of the industry’s first 512GB eUFS (embedded Universal Flash Storage) solution for use in future mobile devices. It utilizes Samsung’s latest 64-layer 512-gigabit V-NAND chips and “provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.”

The new 512GB UFS consists of eight 64-layer 512Gb V-NAND chips and a controller chip, all stacked together. Doubling the density of Samsung’s previous 48-layer V-NAND-based 256GB eUFS, the new 512GB eUFS solution takes the same amount of space as previous 256GB.

This high-capacity eUFS will allow a flagship smartphone to store approximately 130 video clips with resolution of 4K Ultra HD (3840×2160) each up to 10-minute of duration. That is about a ten times increase over currently-most-common 64GB eUFS that allows storing only about 13 video clips of the same size and resolution.

“The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards, said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. “By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world.”

Samsung 512GB eUFS

512GB storage solution can reach up to 860 MB/s for sequential read and 255 MB/s for sequential write. Hence it will enable transferring a full HD video clip of 5GB to an SSD in about six seconds. That is over eight times faster than a typical microSD card.

The new eUFS can read 42,000 IOPS and write 40,000 IOPS for random operations. Its random writes are approximately 400 times fastert han the 100 IOPS speed of conventional microSD card. It will allow users, the high-resolution burst shooting as well as file searching and video downloading in dual-app viewing mode.

In addition to expanding its 256Gb V-NAND production, Samsung intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips.

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